|
Navigation |
|
|
Resume: |
- Assistant Professor, born in Hubei province
- 2006.9-2009.7: Ph. D. in the Department of Physics and Nanjing national laboratory of microstructure, Nanjing University , P. R. China
- 2009.7-now: Assistant director in the SEU-FEI Nano-pico Center
- Work as assistant professor in the School of electronics science and engineering, Southeast University, P. R. China
|
Research interests: |
- Transmission electron microscopy (TEM) in-situ electrical and mechanical properties study of nanostructure materials.
- Nanostructure fabrication and properties study.
|
Selected Publications: |
1.Neng Wan, Tao Lin, Jun Xu, Ling Xu and Kunji Chen, "Preparation and luminescence of nano-sized In2O3 and rare-earth co-doped SiO2 thin films" Nanotechnology 19(2008) 095709 DOI:10.1088/0957-4484/19/9/095709;
2.Wan Neng, Lin Tao, Wang Tao, Li Wei, Xu Jun and Xu Ling, "Fabrication and luminescence properties of Eu3+ doped SiO2 thin films"Journal of Rare Earths 25(2007) 330.
3.Neng Wan, Jun Xu, Tao Lin, Xiangao Zhang and Ling Xu, "Energy transfer and enhanced luminescence in metal oxide nano-particle and rare earth co-doped silica" Applied Physics Letter 92(2008)201109 DOI:10.1063/1.2936842;
4.Neng Wan, Jun Xu, Tao Lin, Ling Xu and Kunji Chen, “Observation and model of highly ordered wavy cracks due to coupling of in-plane stress and interface debonding in silica thin films�?Physics Review B 80(2009) 014121 DOI:10.1103/PhysRevB.80.014121;
5.Neng Wan, Tao Wang, Hongcheng Sun, Guran Chen, Lei Geng, Xinhui Gan, Sihua Guo, Jun Xu, Ling Xu and Kunji Chen, "Indium tin oxide thin films for silicon-based electro-luminescence devices prepared by electron beam evaporation method"Journal of Non-Crystalline Solids, 356 (2010) 911 DOI:10.1016/j.jnoncrysol.2009.12.026;
6. Neng Wan, Jun Xu, Guran Chen, Xinhui Gan, Sihua Guo, Ling Xu and Kunji Chen, "Broadband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature" Acta Materialia 58 (2010) 3068 DOI:10.1016/j.actamat.2010.01.041.
|
|